150mm Rapid Thermal Annealing System With Three Sets Process Gases
Price: Negotiable
MOQ: 1
Delivery Time: 8-10week days
Brand: GaNova
High Light:150mm Rapid Thermal Annealing System, desktop rapid thermal processing equipment, Wafer Rapid Thermal Annealing System
RTP-150RL Rapid Thermal Annealing System with Three Sets Process Gases RTP-150RL: Is in the protection atmosphere of the desktop manual rapid annealing system, with infrared visible light heating single piece Wafer or sample, short process time, high temperature control precision, suitable for 2-6 i... View More
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Boost Your Production with Rapid Thermal Processing RTP-SA-8
Price: Negotiable
MOQ: Negotiable
Delivery Time: 3 month
Brand: Ganova
1.Basic configuration of equipment system 1.1outline The Rapid Thermal Processing is a vertical semi-automatic 8-inch wafer rapid annealing furnace, which uses two layers of infrared halogen lamps as heat sources for heating. The internal quartz cavity is insulated and insulated, and the outer shell... View More
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Fe Doped GaN Substrates Resistivity > 10⁶ Ω·Cm RF Devices
Price: Negotiable
MOQ: Negotiable
Delivery Time: 3-4 week days
Brand: GaNova
High Light:ISO GaN Substrates, gan semiconductor wafer, Fe Doped GaN Substrates
2inch C-face Fe-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 Ω·cm RF devices The achieved breakdown voltage of the Fe-doped GaN epitaxial layer can be as high as 2457 V, which is attributed to the Fe-doped GaN epitaxial layer with higher resistance, which can sustain... View More
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GaN Single Crystal Substrate
Price: Negotiable
MOQ: Negotiable
Delivery Time: 3-4 week days
Brand: GaNova
High Light:GaN Single Crystal Substrate, gan epi wafer 400um, UKAS Single Crystal Substrate
2inch C-face Si-doped n-type free-standing GaN single crystal substrate Resistivity < 0.05 Ω·cm Power device/laser wafer Overview One of the key methods used to fabricate these devices is a light n-type doping of GaN with a low residual impurity concentration of the order of 1015 cm−3 or less. De... View More
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JDCD05-001-003 10*10mm2*0.3mm Electronic Grade Single Crystal Diamond,N Content<100ppb, XRD<0.015º Thermal Conductivity
Price: Negotiable
MOQ: Negotiable
Delivery Time: 3-4 week days
Brand: GaNova
10*10mm2*0.3mm electronic grade single crystal diamond,N content View More
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625um To 675um 4 Inch Blue LED GaN Epitaxial Wafer On Sapphire SSP Flat Sapphire
Price: Negotiable
MOQ: Negotiable
Delivery Time: 3-4 week days
Brand: GaNova
High Light:625um GaN Epitaxial Wafer, SSP gan on sapphire wafers, 675um GaN Epitaxial Wafer
Substrate Thickness 650 ± 25 μm 4 Inch Blue LED GaN Epitaxial Wafer On Sapphire SSP Flat Sapphire 4 inch Blue LED GaN epitaxial wafer on sapphire SSP For example, GaN is the substrate which makes violet (405 nm) laser diodes possible, without use of nonlinear optical frequency-doubling. Its sensitiv... View More
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4 Inch P-Type Mg-Doped GaN On Sapphire Wafer SSP Resistivity~10Ω Cm LED Laser PIN Epitaxial Wafer
Price: Negotiable
MOQ: Negotiable
Delivery Time: 3-4 week days
Brand: GaNova
4 inch P-type Mg-doped GaN on sapphire wafer SSP resistivity~10Ω cm LED, laser, PIN epitaxial wafer The electrical properties of p-type Mg-doped GaN are investigated through variable-temperature Hall effect measurements. Samples with a range of Mg-doping concentrations were prepared by metalorganic ... View More
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JDCD08-001-006 6inch C-Plane Sapphire Substrate Wafer
Price: Negotiable
MOQ: Negotiable
Delivery Time: Negotiable
JDCD08-001-006 6inch C-Plane Sapphire Substrate Wafer Sapphires are Second Only to Diamonds in Durability Diamond is the most durable naturally occurring element on earth and ranks as a 10 out of 10 on Mohs Scale of Mineral Hardness. Sapphires are also very durable and rank as a 9 out of 10 on Mohs ... View More
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4inch 4H-SiC substrate P-level SI 500.0±25.0μm MPD≤5/cm2 Resistivity≥1E5Ω·cm for power and microwave
Price: Negotiable
MOQ: Negotiable
Delivery Time: 3-4 week days
Brand: GaNova
JDCD03-002-002 4inch 4H-SiC substrate P-level SI 500.0±25.0μm MPD≤5/cm2 Resistivity≥1E5Ω·cm for power and microwave devices Overview SiC is used for the fabrication of very high-voltage and high-power devices such as diodes, power transistors, and high power microwave devices. Compared to convention... View More
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8 inch Wafer Dicing Machine X Axis Cutting Range 260mm 1.8 KW 2.2 KW
Price: Negotiable
MOQ: 1
Delivery Time: 8-10week days
Brand: GaNova
High Light:8 inch Wafer Dicing Machine, wafer cutting machine 260mm, Wafer Dicing Machine X Axis
DAD3350 Wafer Dicing Machine X-Axis Cutting Range 260mm 1.8 KW, 2.2 KW Process quality By adopting a high-rigidity bridge-type frame and a spindle front-section support structure, which prevents heat shrinkage and vibration, a more stable processing point can be achieved. Process controls Auto align... View More
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Patterned Sapphire Crystal Wafer 2inch Sapphire Substrate
Price: Negotiable
MOQ: 1
Delivery Time: Negotiable
Brand: GaNova
High Light:Patterned sapphire crystal wafer, 2inch Sapphire Substrate, Al203 sapphire crystal wafer
A-Plane±0.2o Patterned Sapphire Substrates BOW≤-8~0μM Back Surface Roughness 0.8~1.2μm 2inch Patterned Sapphire Substrates,LED Chip,Substrate Material The regular patterns created on the sapphire substrate counteracts the effect of the total internal reflection at the GaN/sapphire interface. And, th... View More
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JDCD05-001-007 CVD Diamond Substrates
Price: Negotiable
MOQ: Negotiable
Delivery Time: 3-4 week days
Brand: GaNova
JDCD05-001-007 CVD Diamond Substrates Overview Diamond is a unique material that often exhibits extreme properties compared to other materials. Discovered about 30 years ago, the use of hydrogen in plasma-enhanced chemical vapor deposition (CVD) has enabled the growth and coating of diamond in film ... View More
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JDCD05-001-005 5*5mm2*0.5mm Electronic Grade Single Crystal Diamond,N Content<100ppb, XRD<0.015º Thermal Conductivity
Price: Negotiable
MOQ: Negotiable
Delivery Time: 3-4 week days
Brand: GaNova
JDCD05-001-005 5*5mm2*0.5mm electronic grade single crystal diamond,N content View More
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100.0mm Silicon Carbide Crystal 4" P Grade 18.0mm
Price: Negotiable
MOQ: Negotiable
Delivery Time: 3-4 week days
High Light:100.0mm Silicon Carbide Crystal, single crystal sic 4", Silicon Carbide Crystal 18.0mm
100.0mm±0.5mm SiC Seed Crystal 4" P Grade 0.015~0.028ohm.cm 18.0mm±2.0mm SiC Seed Crystal 4" PGrade Electronic devices formed in SiC can operate at extremely high temperatures without suffering from intrinsic conduction effects becauseof the wide energy bandgap. Also, this property allows ... View More
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2 inch GaN on Silicon HEMT Epi wafer for Power device
Price: Negotiable
MOQ: 5
Delivery Time: Negotiable
Brand: Ganova
Introduction to GaN on Silicon HEMT Epi wafer Silicon based gallium nitride HEMT epitaxial wafer is a high electron mobility transistor (HEMT) epitaxial wafer based on gallium nitride (GaN) material. Its structure mainly includes AlGaN barrier layer, GaN channel layer, AlN buffer layer, and silicon ... View More
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5 X 10 mm2 M Face GaN Epitaxial Wafer Thickness 325um 375um
Price: Negotiable
MOQ: Negotiable
Delivery Time: 3-4 week days
Brand: GaNova
High Light:5 X 10.5 mm2 GaN Epitaxial Wafer, 325um gan gallium nitride wafer, GaN Epitaxial Wafer 375um
5 X 10 mm2 M Face Free-Standing GaN Substrates Thickness 350 ±25 µm 5*10mm2 M-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.05 Ω·cm Power device/laser wafer Overview These GaN wafers realize unprecedented ultra-bright laser diodes and high-efficiency power device... View More
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4 Inch N-Type UID-Doped GaN On Sapphire Wafer SSP Resistivity＞0.5 Ω cm LED, Laser, PIN Epitaxial Wafer
Price: Negotiable
MOQ: Negotiable
Delivery Time: 3-4 week days
Brand: GaNova
4 inch N-type UID-doped GaN on sapphire wafer SSP resistivity＞0.5 Ω cm LED, laser, PIN epitaxial wafer For example, GaN is the substrate which makes violet (405 nm) laser diodes possible, without use of nonlinear optical frequency-doubling. Its sensitivity to ionizing radiation is low (like other gr... View More
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4 Inch Blue LED GaN Epitaxial Wafer C Plane Flat Sapphire
Price: Negotiable
MOQ: Negotiable
Delivery Time: 3-4 week days
Brand: GaNova
High Light:Blue LED GaN Epitaxial Wafer, 4 Inch led wafer, GaN Epitaxial Wafer C Plane
4 Inch Blue LED GaN Epitaxial Wafer On Sapphire SSP C Plane (0001) Off Angle Toward M-Axis 0.2 ± 0.1° 4 inch Blue LED GaN epitaxial wafer on sapphire SSP Using blue radiation in LED technology offers two specific advantages – one, it consumes lesser power, two, it is more efficient in terms of light... View More
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375 um GaN Epitaxial Wafer Free Standing U-GaN SI-GaN Substrates
Price: Negotiable
MOQ: Negotiable
Delivery Time: 3-4 week days
Brand: GaNova
High Light:375um GaN Epitaxial Wafer, gallium nitride wafer UKAS, GaN Epitaxial Wafer 50.8mm
350 ± 25 μm (11-20) ± 3o, 8 ± 1 mm 2-inch Free-standing U-GaN/SI-GaN Substrates 2inch C-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 Ω·cm Power device/laser wafer Overview The standard in semiconductor material industry specifies the method for testing the sur... View More
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4 inch Fe-doped Freestanding GaN Substrate Gallium Nitride Substrate
Price: Negotiable
MOQ: 1
Delivery Time: Negotiable
Brand: Ganova
Introduction to 4-inch iron doped gallium nitride single crystal GaN substrate 4-inch iron doped gallium nitride single crystal GaN substrate is a single crystal substrate made of gallium nitride (GaN) material, which improves its electrical properties by doping iron elements. Gallium nitride (GaN) ... View More
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